Vanguard Group has been granted a patent for a method of forming a doped gallium nitride (GaN) layer. The process involves providing a substrate structure with a gallium nitride layer, depositing a dopant source layer, annealing to diffuse dopants, and activating them to create the desired layer. GlobalData’s report on Vanguard Group gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Vanguard Group, Retail trading platforms was a key innovation area identified from patents. Vanguard Group's grant share as of January 2024 was 84%. Grant share is based on the ratio of number of grants to total number of patents.

Method of forming p-type gallium nitride layer

Source: United States Patent and Trademark Office (USPTO). Credit: The Vanguard Group Inc

A recently granted patent (Publication Number: US11881404B2) discloses a method for forming a p-type gallium nitride layer. The process involves sputtering a dopant source containing magnesium onto an epitaxial gallium nitride layer, patterning the dopant source, depositing a dielectric capping structure, annealing the substrate structure to diffuse magnesium, and activating the diffused magnesium to create the p-type gallium nitride layer. The method includes specific parameters such as temperature ranges for annealing and thickness ranges for the dopant sources, like magnesium fluoride or aluminum nitride magnesium composite material.

Additionally, the patent covers a method for forming a doped gallium nitride layer, which includes similar steps of forming a dopant source layer, patterning, annealing, and activating the diffused dopants. The process involves specific techniques like sputtering the dopant source layer, surface preparation processes, and the use of a dielectric capping structure like AlN/SiO2 or AlN/SiN. The patent also details the composition of the substrate structure, including a polycrystalline ceramic core, a barrier layer, a bonding layer, and a single crystalline layer. Furthermore, the method allows for the annealing of magnesium implant damage in the substrate structure and the use of a mask to expose specific portions of the epitaxial gallium nitride layer before forming the dopant source layer.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.