JPMorgan Chase & Co has patented a magnetoelectric memory device with a unique structure including a magnetic tunnel junction with layers providing voltage-controlled magnetic anisotropy. The device comprises electrodes, reference layer, tunnel barrier, free layer, and capping layer. GlobalData’s report on JPMorgan Chase & Co gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on JPMorgan Chase & Co, Retail trading platforms was a key innovation area identified from patents. JPMorgan Chase & Co's grant share as of January 2024 was 90%. Grant share is based on the ratio of number of grants to total number of patents.

Voltage-controlled magnetoelectric memory device with magnetic tunnel junction

Source: United States Patent and Trademark Office (USPTO). Credit: JPMorgan Chase & Co

A recently granted patent (Publication Number: US11889702B2) discloses a magnetoelectric memory device designed with a unique structure to enhance memory performance. The device includes a magnetic tunnel junction situated between two electrodes, with specific layers such as a nonmagnetic tunnel barrier, metal dust layers, and a dielectric capping layer. The metal dust layers play a crucial role in generating voltage-controlled magnetic anisotropy coefficients, influencing the behavior of the free layer within the memory device. Additionally, the device incorporates composite reference magnetization structures to further optimize its functionality.

Furthermore, the patent outlines a method for operating the memory device, involving sensing operations to determine the magnetization state of the free layer and comparison operations to assess if it aligns with the target magnetization state. By applying programming pulses strategically based on the magnetization state, the device can efficiently switch between different states. The method also highlights the use of specific polarities for the sense voltage and programming pulse to manipulate the magnetic anisotropy of the free layer effectively. Overall, the patent introduces innovative techniques and structures to enhance the performance and efficiency of magnetoelectric memory devices, paving the way for advancements in memory technology.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.