Vanguard Group has been granted a patent for a method of fabricating a high electron mobility transistor (HEMT). The process involves providing a substrate with specific layers, forming a passivation layer, creating contact holes, and applying a conductive layer. GlobalData’s report on Vanguard Group gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Vanguard Group, Retail trading platforms was a key innovation area identified from patents. Vanguard Group's grant share as of February 2024 was 87%. Grant share is based on the ratio of number of grants to total number of patents.

Method of fabricating a high electron mobility transistor

Source: United States Patent and Trademark Office (USPTO). Credit: The Vanguard Group Inc

A recently granted patent (Publication Number: US11929407B2) discloses a method for fabricating a high electron mobility transistor. The method involves providing a substrate with specific layers, including a group III-V channel layer, a group III-V barrier layer, a group III-V gate layer, and a gate etch stop layer. A passivation layer is formed to cover the barrier layer and gate etch stop layer, followed by creating gate and source/drain contact holes in the passivation layer. A conductive layer is then deposited on the passivation layer and within the contact holes to complete the fabrication process.

Furthermore, the patent details various aspects of the fabrication method, such as the composition of different layers involved, including the gate etch stop layer and passivation layer. It also describes the formation of a Schottky contact between the gate etch stop layer and the group III-V gate layer. Additionally, the method includes steps for etching the conductive layer to form the gate and source/drain electrodes, followed by the formation of an interlayer dielectric to cover these electrodes. The patent emphasizes the conformal coverage of the gate and source/drain electrodes on the passivation layer, highlighting the precision and efficiency of the fabrication process for high electron mobility transistors.

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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.

GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.