Vanguard Group has filed a patent for a structure of transferring dies. The structure includes an oxide layer supporting feature with multiple repeating units, each containing a die setting region and a peripheral region. The dies are placed on the die setting regions, while a bonding feature is located on the peripheral region. A supporting wafer is positioned beneath the oxide layer supporting feature, separated from the dies and bonding feature by a gap. A spacer is placed between the bonding feature and the supporting wafer, bonded to the bonding feature. GlobalData’s report on Vanguard Group gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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The patent filed is for a structure of transferring dies
A recently filed patent (Publication Number: US20230307268A1) describes a structure for transferring dies, which includes an oxide layer supporting feature with repeating units. Each repeating unit consists of a die setting region and a peripheral region, with the die setting region of one unit separated from the peripheral region of an adjacent unit. The structure also includes multiple dies placed on the die setting regions, a bonding feature on the peripheral region, a supporting wafer beneath the oxide layer supporting feature, and a spacer between the bonding feature and the supporting wafer. The spacer is bonded to the bonding feature.
The bonding feature and the die in this structure have the same semiconductor layer and interconnect structure layer. The spacer can be a glue bond dam or a eutectic bond bump, and it is bonded to the bonding pad of the bonding feature. The die can have conductive pads, and optionally an under bump metallurgy and a metal bump on the conductive pad. The supporting wafer has a cavity corresponding to the die, with the distance between the die and the bottom surface of the cavity greater than the distance between the bonding feature and the surface of the supporting wafer.
The structure also includes a protective layer covering the dies, bonding feature, and the exposed surface of the oxide layer. The protective layer has openings to expose the conductive pads or metal bumps of the dies and the bonding pad of the bonding feature.
The patent also describes a method for transferring dies using a semiconductor-on-insulator (SOI) substrate. The method involves forming the dies and bonding feature on the oxide layer of the SOI substrate, providing a supporting wafer with a spacer, bonding the supporting wafer to the bonding feature through the spacer, etching the oxide layer to separate the die setting region from the peripheral region, and removing the semiconductor substrate to expose the oxide layer.
The method can also include using transfer equipment to fracture and separate the die setting region from the peripheral region, transferring the portion of the oxide layer and the dies onto a carrier substrate using the transfer equipment, and detaching the transfer equipment and attachment feature from the oxide layer after the dies are transferred.
Overall, this patent presents a structure and method for transferring dies using an oxide layer supporting feature and a supporting wafer, providing a reliable and efficient way to transfer dies onto a carrier substrate.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
