China Pacific Insurance (Group) has filed a patent for an electrostatic discharge (ESD)-protected radio frequency (RF) switch circuitry. The system includes a common port, terminal port, switch circuitry with stacked transistors, and ESD protection circuitry. This innovation aims to enhance RF switch circuitry protection. GlobalData’s report on China Pacific Insurance (Group) gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on China Pacific Insurance (Group), Digital lending was a key innovation area identified from patents. China Pacific Insurance (Group)'s grant share as of January 2024 was 66%. Grant share is based on the ratio of number of grants to total number of patents.

Esd-protected rf switch circuitry with stacked transistors

Source: United States Patent and Trademark Office (USPTO). Credit: China Pacific Insurance (Group) Co Ltd

A newly filed patent (Publication Number: US20240039276A1) describes an electrostatic discharge (ESD)-protected radio frequency (RF) switch circuitry. The circuitry includes a common port, at least one terminal port, and a switch circuitry with one or more transistors connected in a stacked configuration. A first ESD protection circuitry is coupled between the gate of the first transistor and a driver circuitry, decoupling the gate during an ESD pulse duration and coupling a control voltage outside of the pulse duration. The switch circuitry can have a series arm or a shunt arm, with corresponding ESD protection circuitry for each transistor in the arm.

Furthermore, the patent also covers an electrostatic discharge (ESD)-protected radio frequency (RF) switch integrated circuit (IC) device. This device includes a switch circuitry with stacked transistors in a series arm, a driver circuitry, and ESD protection circuitry that decouples gates during an ESD pulse and couples a control voltage otherwise. The ESD protection circuitry can be common or individual for each transistor, and additional protection circuitry can be included for a shunt arm. The method described in the patent involves electrically decoupling gates of series transistors in the switch circuitry during power-down and coupling control voltages during power-up, with separate protection circuitry for shunt transistors. Pass gate transistors are used to switch between conducting and non-conducting states for effective ESD protection.

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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.

GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.