Vanguard Group. has been granted a patent for a method that enables the monolithic integration of a piezoelectric micromachined ultrasonic transducer (PMUT) and complementary metal oxide semiconductor (CMOS) in a single step. This process involves multiple layers and structures, culminating in a sealed open cavity. GlobalData’s report on Vanguard Group gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on Vanguard Group, Retail trading platforms was a key innovation area identified from patents. Vanguard Group's grant share as of July 2024 was 83%. Grant share is based on the ratio of number of grants to total number of patents.
Monolithic integration of pmut and cmos devices
The patent US12037239B2 outlines a method for the monolithic integration of a piezoelectric micromachined ultrasonic transducer (PMUT) with a complementary metal oxide semiconductor (CMOS). The process begins with the preparation of a CMOS wafer that includes a metal layer, followed by the formation of a dielectric layer and a sacrificial structure. Subsequent steps involve creating a bottom electrode, a piezoelectric layer, and a top electrode, along with a protective layer. The method includes the formation of vias that connect the top electrode to the bottom electrode and the metal layer, leading to the removal of the sacrificial structure to create an open cavity. Finally, a second dielectric layer is applied, which serves multiple functions, including sealing the cavity and providing passivation for the CMOS.
Additional claims detail variations in the formation of the dielectric and sacrificial structures, as well as the electrodes. The method allows for the integration of metal through silicon vias (TSVs) and under bump metallization (UBM) layers, enhancing the functionality of the PMUT within the CMOS framework. The patent also describes techniques for patterning and planarizing various layers, ensuring precise alignment and functionality of the integrated components. Overall, the claims present a comprehensive approach to creating a sophisticated PMUT-CMOS integration that could have significant applications in ultrasonic sensing technologies.
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